Electrical stability of inkjet-patterned organic complementary inverters measured in ambient conditions

Abstract

Complementary organic inverters were fabricated by inkjet patterning of both the metal contacts and the semiconductors. Bottom-gate, bottom-contact organic thin-film transistors with Ta2O5-polymer bilayer dielectrics, inkjet-printed silver electrodes, and inkjet-printed organic semiconductors exhibit hole and electron mobilities as high as ∼10−2 cm2/V s. Complementary inverters based on these transistors operate in ambient and exhibit a gain of −4.4 with supply voltage VDD=+20 V and −3 dB cutoff at 100 kHz with a load of 0.02 pF. The electrical stability of the inverters was evaluated for analog and digital operation, and a noise margin ≥1.1 V at VDD=+15 V was measured with bias-stress effects included.