Publication | Closed Access
High hole concentration of p-type InGaN epitaxial layers grown by MOCVD
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Citations
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References
2005
Year
Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringApplied PhysicsMolecular Beam EpitaxyEpitaxial GrowthHigh Hole ConcentrationOptoelectronicsCompound Semiconductor
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