Yttrium oxide thin films, Y₂O₃, grown by ion beam sputtering on Si

Abstract

Thin films of yttrium sesquioxide, Y2O3, have been deposited on Si by ion beam sputtering at room temperature and 700 °C under an oxygen pressure of 4×10-3 Pa or by oxygen ion beam assisted deposition. The stoichiometry of these films was analysed by Rutherford backscattering spectrometry. The thickness and refractive index of the oxide were studied as functions of the wavelength by ellipsometry. The crystalline orientations of the deposited films were determined by x-ray diffraction. The micro- and nano-structure were investigated by transmission electron microscopy on cross section samples.