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Role of ion energy in determination of the <i>sp</i>3 fraction of ion beam deposited carbon films
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1996
Year
EngineeringIon Beam InstrumentationChemical EngineeringCarbon-based MaterialIon BeamIon EmissionThin Film ProcessingMaterials ScienceCarbon FilmsPhysicsCrystalline DefectsDiamond-like CarbonMaterial AnalysisSurface ScienceApplied PhysicsSp3 BondingThin FilmsIon EnergySp3 Fraction
The role of ion energy over the range 5 eV≤E≤20 keV in the production of the dense diamondlike sp3-bonded phase of carbon films deposited from ion beams has been investigated. Films with a significant sp3 component (≳40%), as determined by electron energy loss spectroscopy (EELS), can be formed over the wide energy region 30 eV≤E≤10 keV at room temperature. The sp3 fraction is completely suppressed only for E≤10 eV or E≥20 keV. For both cases, this suppression is associated with a sharp increase of the surface roughness, as determined by atomic force microscopy (AFM). The different nature of the mechanisms responsible for the suppression of sp3 bonding in both the low and high energy regions is discussed.