The influence of annealing temperature on ReRAM characteristics of metal/NiO/metal structure

Abstract

The resistive switching of NiO sandwiched between Pt bottom and top electrodes are formed by thermal oxidation at the temperature from 300℃ to 800℃. The ReRAM characteristics are investigated from the view point of practical applications. The stable and uniform formation of NiO films are revealed by XPS analysis and the chemical compositions of NiO are almost independent of oxidation temperatures. However, the forming voltages of the film prepared at higher oxidation temperature are scattered and reach to high values. This fact indicates that the forming process occurs at the weak spot, and the density of the weak spot is low in the film formed at higher temperature. As a result, the NiO prepared at lower temperature shows stable and lower forming voltages.