Publication | Closed Access
Dynamics of photoexcited carriers in ZnO epitaxial thin films
120
Citations
13
References
1999
Year
Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsPhotoexcited CarriersOptical PropertiesExciton AbsorptionMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorMaterials SciencePhotoluminescencePhysicsOxide ElectronicsOptoelectronic MaterialsApplied PhysicsPump–probe TechniqueThin FilmsOptoelectronicsOptical Gain
Optical gain spectra of ZnO epitaxial thin films have been measured by using a pump–probe technique. The optical gain is thought to be due to electron–hole plasma. In the differential absorption spectra, we observed saturation of the exciton absorption, band-gap renormalization, as well as the optical gain. From the temporal changes of these structures, the dynamical properties of the photoexcited carriers are discussed.
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