Observation of biexcitonic effect in single ZnCdSe quantum well under very low excitation density

Abstract

Under an excitation density of 0.4 W/cm2, a strong biexcitonic peak was observed in the photoluminescence (PL) spectrum of a single quantum well which was grown in submonolayer deposition mode. Its intensity was found to increase superlinearly with excitation density. The shape of the biexcitonic peak was found to be similar to that of biexcitons in CuCl and CdS crystal and a binding energy of 9.8 meV was obtained. When the temperature increased from 10 to 31 K, the biexcitonic peak decreased considerably whereas the excitonic peak increased slightly.