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High-Pressure Raman Study of Ba Doped Silicon Clathrate
71
Citations
17
References
2003
Year
Materials ScienceSi CagesEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsHigh-pressure Raman StudyVibrational ModesSemiconductor MaterialSilicon On InsulatorSpectroscopic PropertyDecompression Processes
Vibrational properties of Ba doped Si clathrate are investigated at high pressures up to 20 GPa by Raman spectroscopy. Vibrations related with Ba encaged in the Si cages are observed below 100 cm(-1) by low-frequency Raman measurements of Ba8Si46 and Ba6.6Si46 clathrates. The high-pressure Raman spectra obtained for both compression and decompression processes reveal a new phase transition at 7 GPa, and the reversibility of the phase transition at 15 GPa. We investigate the mechanisms of these phase transitions, the interaction between the guest and host frame, and the volume dependence of the vibrational modes.
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