Universal behavior of magnetoconductance due to weak localization in two dimensions

Abstract

Magnetoconductance due to weak localization is studied experimentally for different semiconductor heterostructures. We observe that, when presented as a function of the appropriately normalized magnetic field, different samples show very similar high-field behavior. A theoretical description is developed that allows one to describe in a consistent way both the high- and low-field limits. The theory predicts universal magnetic field dependence ${(B}^{\ensuremath{-}1/2})$ of the conductivity correction for two-dimensional systems in the high-field limit. Low-field magnetoconductance depends strongly on spin and phase relaxation processes. Comparison of the theory with experiment confirms the universal behavior in high fields and allows one to estimate the spin and phase relaxation times.