The deposition of aluminum nitride thin films by metal‐organic CVD—an alternative precursor system

Abstract

Thin films of aluminum nitride have applications in magnetooptic multilayer structures. Methods must therefore be developed for depositing thin films of this commercially important material at low to moderate substrate temperatures. Conventional CVD riquires a high substrate. The preliminary results presented here show that AIN films grown by metalorganic CVD using Me 3 Al combined with either tertiary butylamine of isoproplamine, a technique avoiding the above problems, are of sufficient quality for magnetooptical applications. A possible deposition mechanism is proposed.