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Strain-induced crossover of the metal-insulator transition in perovskite manganites
105
Citations
16
References
2005
Year
Materials ScienceFerroelasticsEngineeringPhysicsFerroelectric ApplicationElectronic StatesPerovskite ModuleApplied PhysicsCondensed Matter PhysicsQuantum MaterialsPerovskite MaterialsHalide PerovskitesEpitaxial Growth TechniqueThin FilmsStrain-induced CrossoverLead-free PerovskitesFunctional Materials
The essential role of strain in determining the electronic states of perovskite manganites is clearly demonstrated in the form of anisotropic and substrate-dependent crossover of a first-order phase transition in charge-orbital ordered epitaxial thin films of ${({\mathrm{Nd}}_{1\ensuremath{-}x}{\mathrm{Pr}}_{x})}_{0.5}{\mathrm{Sr}}_{0.5}{\mathrm{MnO}}_{3}$. An application of (110)-oriented epitaxial growth technique allows the structural flexibility indispensable for the large anisotropic lattice deformation at the first-order transition. The technique enables us to fine-tune the Jahn-Teller distortion for manipulating the metal-insulator transition in thin films, a first step toward the strongly correlated electron devices.
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