Flexible Low‐Voltage Organic Transistors and Circuits Based on a High‐Mobility Organic Semiconductor with Good Air Stability

Abstract

Flexible transistors and circuits based on dinaphtho-[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm2 V−1 s−1 and the ring oscillators have a stage delay of 18 µs. Due to the excellent stability of the semiconductor, the devices and circuits maintain 50% of their initial performance for a period of 8 months in ambient air. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.