A vertical injection blue light emitting diode in substrate separated InGaN heterostructures

Abstract

A vertical injection, light emitting InGaN quantum well diode has been demonstrated by separating the nitride heterostructure from its sapphire substrate by ultraviolet laser photoablation within a process scheme that allows transferring the devices to a host substrate. The incorporation of a dielectric multilayer stack to the device is shown to be a first practical step towards a resonant cavity light emitting diode.