Atomic scale flattening, step formation and graphitization blocking on 6H- and 4H-SiC{0 0 0 1} surfaces under Si flux

Abstract

Atomically flat terraces separated by almost parallel steps have been obtained on 6H- and 4H-SiC{0 0 0 1} surfaces after extended annealing under Si flux in the 1050–1100 °C temperature range for both the Si- and C-face. The height of the steps is one-half the unit cell for both faces and polytypes. Graphitization is avoided because the incoming Si atoms compensate for the outgoing sublimated Si.