Raman-scattering and structure investigations on porous SiC layers

Abstract

Raman scattering spectroscopy, scanning electron microscopy, and scanning acoustic microscopy were studied on porous SiC layers prepared by different technological routes and subjected to reactive ion treatment. The Raman spectra revealed a number of features specific for nanocrystallite materials, which can be used for characterization and diagnostics of porous SiC layers for technological applications.