76.3: 32‐inch LCD Panel Using Amorphous Indium‐Gallium‐Zinc‐Oxide TFTs

Abstract

Abstract 32‐inch TFT‐LCD Panel using the amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs) is demonstrated in this study. The size of 32‐inch TFT‐LCD driven by a‐IGZO TFTs was the top two largest sizes in our limited information. Less report was larger than the size of 32‐inch a‐IGZO TFT‐LCDs. To realize a‐IGZO TFTs driving the large size TFT‐LCD panel, bottom gate structure is proposed. High performance a‐IGZO TFTs is achieved successfully to ligh‐on the 32‐inch LCD panel. Uniform electrical characteristic is obtained on the coplanar type TFTs. The field effect mobility is 5.16 cm 2 /Vs, threshold voltage is 0.5 V, sub‐threshold swing is 0.38 V/decade, and on/off current ratio is 1.8 × 10 8 . After 1000 sec DC gate bias stress at −30 V, the threshold voltage shifts is less than 1.1 V.