Resonant charge relaxation as a likely source of the enhanced thermopower in FeSi

Abstract

The enhanced thermopower of the correlated semiconductor FeSi is found to be robust against the sign of the relevant charge carriers. At $T\ensuremath{\approx}70$ K, the position of both the high-temperature shoulder of the thermopower peak and the nonmagnetic-enhanced paramagnetic crossover, the Nernst coefficient $\ensuremath{\nu}$ assumes a large maximum and the Hall mobility ${\ensuremath{\mu}}_{H}$ diminishes to below 1 ${\mathrm{cm}}^{2}$/V s. These cause the dimensionless ratio $\ensuremath{\nu}/{\ensuremath{\mu}}_{H}$---a measure of the energy dispersion of the charge scattering time $\ensuremath{\tau}(\ensuremath{\epsilon})$---to exceed that of classical metals and semiconductors by two orders of magnitude. Concomitantly, the resistivity exhibits a hump and the magnetoresistance changes its sign. Our observations hint at a resonant scattering of the charge carriers at the magnetic crossover, imposing strong constraints on the microscopic interpretation of the robust thermopower enhancement in FeSi.