High speed normally-off GaAs MESFET integrated circuit - Concepedia

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High speed normally-off GaAs MESFET integrated circuit

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References

1981

Year

F. Katano, Takashi Furutsuka, A. Higashisaka

Electronics Letters

Electrical EngineeringEngineeringRf SemiconductorNanoelectronicsElectronic EngineeringApplied PhysicsSemiconductor Device FabricationConventional PhotolithographyIntegrated CircuitsGaas SurfaceMicroelectronicsNormally-off Gaas MesfetOptoelectronicsSemiconductor Device

Abstract

Normally-off GaAs MESFET integrated circuits with a maximum toggle frequency of 2.4 GHz were fabricated by conventional photolithography. The unfavourable effect of the surface depletion layer due to the large state density at the GaAs surface has been reduced by adopting the recessed gate FET structure.