Low-threshold (Ga,In)(As,P) d.h. lasers emitting at 1.55 μm grown by l.p.e.

Abstract

Threshold current densities as low as 2.13 kA cm−2 have been achieved in broad-contact double-heterostructure lasers with an emission wavelength of 1.55 μm. The three-layer structure was grown by liquid-phase epitaxy and contained a quaternary active layer 0.6 μm thick and a p-type quaternary upper confining layer with a bandgap of 1.05 eV. The normalised threshold current density was 3.5 kA cm−2 μm−1.