Surface reconstructions for InAs(001) studied with density-functional theory and STM

Abstract

The stability of different surface reconstructions on InAs(001) is investigated theoretically and experimentally. Density-functional theory calculations predict four different surface reconstructions to be stable at different chemical potentials. The two dominant reconstructions are the \ensuremath{\beta}2 (2\ifmmode\times\else\texttimes\fi{}4) for high As, and the \ensuremath{\alpha}2 (2\ifmmode\times\else\texttimes\fi{}4) for low As overpressure. This trend is confirmed by scanning tunneling microscopy of carefully annealed InAs(001) surfaces. A similar behavior is predicted for GaAs(001).