Electron-beam switching of thin-film ZnS electroluminescent devices

Abstract

An electron beam of moderate current density (∼10−5 A/cm2) and energy (10–16 keV) has been used to change the luminance state of a thin-film ZnS : Mn electroluminescent device having hysteretic or memory-type behavior with respect to applied voltage. The dwell time of the beam required for writing is of the order of 0.05–1 ms, depending upon applied voltage and beam current density. The change in luminance is confined to the area bombarded and persists for hours, decaying approximately as erf(αt−1/2) for 50<t<104 s.