A power amplifier based on an extended resonance technique

Abstract

A new power amplifier based on an extended resonance technique is presented. This technique produces high power through multiplying the power handling capability of a single device by the number of devices employed while maintaining the gain of a single-device amplifier. An X-band power combining amplifier employing four 100 mW MESFET's was designed and constructed. The small signal gain was measured at 11.5 dB, and a maximum of 480 mW was obtained at 9.57 GHz with a power-added efficiency of 30.8%.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>