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High Dose Ion Implantation into Photoresist
75
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0
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1978
Year
Optical MaterialsEngineeringElectron-beam LithographyMicroscopyOptoelectronic DevicesBiomedical EngineeringIon ImplantationElectronic DevicesBeam LithographyIon BeamResist FilmRadiation ImagingIon‐implanted ResistMaterials ScienceMaterials EngineeringCrystalline DefectsOptoelectronic MaterialsPhotoelectric MeasurementApplied PhysicsThin FilmsPhotoresist FilmsSolar Cell Materials
The characteristics of heavily ion‐implanted photoresist films were studied in relation to types of photoresist, ion species, accelerating energies, and dose levels. By high energy, high dose ion implantation it was observed that the optical transmission of the resist film was exceedingly decreased and the resist becomes more mechanically, thermally, and chemically resistant. Several experimental data indicated that these results are due to the change of photoresist to disordered graphite. As an application of this ion‐implanted resist, a new photomask fabrication process is developed.