Publication | Closed Access
Intensity fluctuation in semiconductor lasers coupled to external cavity
36
Citations
20
References
1985
Year
PhotonicsEngineeringLaser SciencePhysicsSemiconductor LasersOptical PropertiesCavity QedApplied PhysicsLaser ApplicationsNew MechanismLaser-based SensorBroad PeaksIntensity Noise SpectrumOptoelectronicsHigh-power LasersOptical Amplifier
Broad peaks are observed in the intensity noise spectrum for external cavity AlGaAs lasers. Oscillating longitudinal mode spectrum measured with a high resolution Fabry-Perot interferometer indicates that the intensity noise peaks result from the lasing of several closely spaced external cavity modes. A new mechanism is proposed to explain the observed noise spectrum; the intensity fluctuation is induced by modulation of the dielectric constant in the semiconductor cavity due to the beating of the electric fields for lasing modes. Qualitative agreements between the theory and experiments are obtained.
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