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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl[sub 4]
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1961
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Materials EngineeringSemiconductorsMaterials ScienceSemiconductor TechnologyEngineeringElectronic MaterialsEpitaxial FilmsSilicon TetrachlorideEpitaxial GrowthControlled ThicknessApplied PhysicsSemiconductor Device FabricationOptoelectronic DevicesThin FilmsSilicon On InsulatorMolecular Beam EpitaxyThin Film ProcessingEpitaxial Silicon Films
Epitaxial films of silicon with controlled thickness and resistivity either n‐ or p‐type may be grown using the hydrogen reduction of silicon tetrachloride appropriately doped with or . The basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in this paper.