Measuring Ge segregation by real-time stress monitoring during Si1−<i>x</i>Ge<i>x</i> molecular beam epitaxy

Abstract

Real-time stress measurements during Si1−xGex/Si molecular beam epitaxy are used to dynamically monitor Ge surface segregation. Segregation during alloy growth produces a change in the surface stress that offsets the coherency stress in the pseudomorphic film. We outline a method for analyzing the stress evolution kinetics to determine the alloy composition profile resulting from segregation.