Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion Implantation

Abstract

Electroluminescence has been obtained from ZnSe p-n junctions. ZnSe films were grown on n-type GaAs substrates by molecular beam epitaxy. The dopant used for n-type ZnSe was Ga, and p-type ZnSe was formed by nitrogen ion implantation into undoped ZnSe which was grown on the Ga-doped ZnSe layer. Rapid thermal annealing was performed using an infrared lamp in N 2 ambient. The formation of a p-n junction was confirmed by measuring electron beam-induced current. The electroluminescence spectra were dominated by two peaks of band-edge emission at 446 and 459 nm at 77 K.