Graphene on SiC as a Q-switcher for a 2 μm laser

Abstract

Double-layer graphene epitaxially grown on silicon carbide was used to Q-switch a Tm:YAG laser. Stable Q-switched laser pulses at the central wavelength of 2.01 μm were obtained. The maximum average output power, pulse repetition rate, and single pulse energy were 38 mW, 27.9 kHz, and 1.74 μJ, respectively. Our results illustrate that graphene can be used as a saturable absorber at the 2 μm region.