Tris(triisopropylsilyl)silane and the Generation of Bis(triisopropylsilyl)silylene

Peter P. Gaspar, A.M. Beatty, Tongqian Chen, Tesfamichael Haile, Deqing Lei, William R. Winchester, Janet Braddock‐Wilking, Nigam P. Rath, Wim T. Klooster, Thomas F. Koetzle,

Organometallics · 1999 · 54 citations · 28 references

Concepts

Abstract

Tris(triisopropylsilyl)silane (iPr 3 Si) 3 SiH has been synthesized and studied by X-ray and neutron diffraction. It possesses an unusual structure in which the four silicon atoms are nearly coplanar, ∠Si−Si−Si = 118.41(5)°. The Si−H distance is found to have a normal value of 1.506(2) Å. Thermal and room-temperature photochemical decomposition of (iPr 3 Si) 3 SiH leads to the elimination of iPr 3 SiH and the generation of bis(triisopropylsilyl)silylene, [(iPr 3 Si) 2 Si:]. Reactions of (iPr 3 Si) 2 Si: include precedented insertions into H−Si bonds and addition to the π-bonds of olefins, alkynes, and dienes. Despite theoretical predictions of a triplet ground state for [(iPr 3 Si) 2 Si:], stereospecific addition to cis- and trans- 2-butene was observed.

References

28