Improvements of ZnO Qualities Grown by Metal-Organic Vapor Phase Epitaxy Using a Molecular Beam Epitaxy Grown ZnO Layer as a Substrate

Abstract

Zinc oxide (ZnO) of high quality was homoepitaxially grown by metal-organic vapor phase epitaxy (MOVPE) on molecular beam epitaxy (MBE)-grown ZnO layers after the pretreatment of the underlying MBE-ZnO at 1000°C in N 2 which resulted in an atomically flat surface. In photoluminescence at 15 K, the 3 meV line width of the emission from donor-bound-excitons (D 0 X) and the observation of the fourth phonon replica of the emission from free-excitons (EX) have demonstrated the high potential of MOVPE growth of ZnO toward optical applications.