Publication | Closed Access
Electrochemically Induced Atom-by-Atom Growth of ZnS Thin Films: A New Approach for ZnS Co-deposition
36
Citations
19
References
2006
Year
Materials ScienceZns Co-depositionEngineeringNanomaterialsNanotechnologySurface ScienceApplied PhysicsBand GapNanostructure SynthesisChemical Vapor DepositionChemistryThin FilmsZns Thin FilmsChemical DepositionInduced Atom-by-atom GrowthUltrathin FilmsElectrochemistryThin Film Processing
Ultrathin films of ZnS were grown on Au (111) substrates using a novel, simple co-deposition method and characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy. Cyclic voltammograms were used to determine approximate deposition potentials for co-deposition. XRD shows that the material growth is highly preferential with (111) orientation. Both AFM and XRD data indicate that the ZnS growth mechanism starts by the formation of rounded nanoparticles at the surface and then continues by lateral and vertical growth to form flat square crystallites of ZnS. UV-vis spectra taken for the ZnS thin films with various thicknesses, which is related to deposition time, shows that the band gap of the ZnS decreases as the film thickness increases.
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