Improved Energy Storage Performance and Fatigue Endurance of Sr‐Doped PbZrO ₃ Antiferroelectric Thin Films

Abstract

Sr‐doped PbZrO 3 antiferroelectric (AFE) thin films have been fabricated on the platinum‐buffered silicon substrates via the sol–gel technique. The temperature‐dependent dielectric properties results indicated that the AFE phase was stabilized for the Sr‐modified PbZrO 3 thin films with a Curie temperature of 251°C. The recoverable energy density and energy efficiency of the Sr‐doped PbZrO 3 thin films were enhanced by the doping of strontium. Compared with the pure PbZrO 3 AFE thin films, the performance against fatigue of the Sr‐doped PbZrO 3 thin films were also improved greatly.