Physical review. B, Condensed matter · 1994 · 50 citations · 13 references
EngineeringElectrical EngineeringPhysicsOpticsOptoelectronicsPhotonicsElectro-optic EffectsOptical Properties Of SemiconductorsSemiconductor PhysicsTerahertz PhotonicsTerahertz SpectroscopyUltrafast OpticsCurrentsPhotoconductive GainQuantum Mechanical ModelTerahertz Emission SpectroscopyTerahertz GenerationTerahertz Semiconductor DevicesTerahertz SourcesUltrafast Carrier Dynamics
We report a systematic study of the dc-electric-field dependence of THz radiation from a bulk GaAs sample optically excited by femtosecond pulses. The experimental results reveal that both displacement and transport currents contribute to THz radiation and the relative contributions are shown to be very sensitive to the dc electric field. This observation agrees qualitatively with a simulation based on a fully quantum-mechanical treatment of the transient photoconductive response of GaAs.
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Generation of femtosecond electromagnetic pulses from semiconductor surfaces
X.-C. Zhang, B. B. Hu, J. T. Darrow et al. · Applied Physics Letters · 1990 · 539 citations
Optical rectification at semiconductor surfaces
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Resonant nonlinear susceptibility near the GaAs band gap
X.-C. Zhang, Yanping Jin, Kai Yang et al. · Physical Review Letters · 1992 · 118 citations