Giant magnetoresistance in antiferromagnetic Co/Cu multilayers

TLDR

The study examines how the buffer layer influences the growth of flat Co and Cu layers in antiferromagnetic Co/Cu multilayers. The multilayers exhibit room‑temperature saturation magnetoresistance exceeding 65 % with ~10 kOe fields, several times higher than any previously reported magnetic material.

Abstract

We report giant values of saturation magnetoresistance in sputtered antiferromagnetic Co/Cu multilayers containing thin Co and Cu layers 8–10 Å thick. We discuss the key importance of the buffer layer in controlling the growth of flat Co and Cu layers. As shown by cross-section transmission electron microscopy high-quality structures are found for growth on Fe buffer layers. Such structures display saturation magnetoresistance at 300 K of more than 65% with saturation fields of ≂10 kOe. These values are several times larger than previously found for any magnetic material at room temperature.