Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells

Abstract

We report the demonstration of room temperature gate control over the electron spin dynamics using the Rashba effect in a (110) InAs∕AlSb two-dimensional electron gas. Our calculations predict that the strong spin–orbit interaction in this system produces pseudomagnetic fields exceeding 1 T when only 140 mV is applied across a single quantum well. Using this large pseudomagnetic field, we demonstrate low-power spin manipulation on a picosecond time scale. Our findings are promising for the prospect of nonmagnetic low-power, high-speed spintronics.