Band tailing in heavily doped semiconductors. Scattering and impurity-concentration-fluctuation effects

Abstract

Using a self-consistent multiple-scattering method, we estimate the relative importance of both effects of scattering and of impurity-concentration fluctuations on band states in heavily doped semiconductors and thus we account for band tailing. We apply this formalism to the estimate of the interband absorption spectrum in a typical case, in satisfactory agreement with experiment.