Epitaxy of <i>m</i> ‐plane ZnO on (112) LaAlO₃ substrate

Abstract

Abstract Heteroepitaxial growth of non‐polar m ‐plane (10 $ \bar 1 $ 0) ZnO has been demonstrated on (112) LaAlO 3 single crystal substrates using the pulsed laser deposition method. X‐ray diffraction, reflection high energy electron diffraction, and cross‐sectional transmission electron microscopy with selected‐area diffraction, have been used to characterize the structural properties of deposited ZnO films. The epitaxial relationship between ZnO and LAO is shown to be (10 $ \bar 1 $ 0) ZnO ∥ (112) LAO , (11 $ \bar 2 $ 0) ZnO ∥ ( $ \bar 1 $ $ \bar 1 $ 1) LAO and [0001] ZnO ∥ [ $ \bar 1 $ 10] LAO . (© 2009 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)