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Temperature dependence of photoluminescence properties in a thermally activated delayed fluorescence emitter
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2014
Year
EngineeringTemperature DependencePl Quantum EfficiencyChemistryLuminescence PropertyElectronic Excited StatePhosphorescence ImagingDelayed Fluorescence EmitterPhotoluminescence PropertiesThermally Activated Delayed FluorescencePhotophysical PropertyBiophysicsPhotonicsPhotoluminescencePhotochemistryQuantum ChemistryPl PropertiesExcited State PropertyNatural SciencesApplied PhysicsThin FilmsOptoelectronicsPhosphorescence
Using steady-state and time-resolved photoluminescence (PL) spectroscopy, we have investigated the temperature dependence of PL properties of 1,2,3,5-tetrakis(carbazol-9-yl)-4,6-dicyano-benzene (4CzIPN), which have a small energy gap between its singlet and triplet excited states and thus exhibits efficient thermally activated delayed fluorescence [H. Uoyama et al., Nature 492, 235 (2012)]. Below around 100 K, PL quantum efficiency of 4CzIPN thin films is largely suppressed and strong photoexcitation intensity dependence appears. These features can be explained by using rate equations for the densities of singlet and triplet excited states considering a triplet-triplet annihilation process.
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