The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam Epitaxy

Abstract

Single domain GaAs layers were successfully grown on double domain Si(001) substrates by molecular beam epitaxy (MBE). During the growth, reflection high energy electron diffraction (RHEED) patterns of GaAs films grown on the Si substrates were monitored in situ . They changed gradually from initial spotty unreconstructed patterns to As stabilized (001)2×4 patterns. The morphologies of as grown surfaces and molten KOH etched surfaces of the films were observed by Nomarski optical microscope and also indicate that the films were single domain.