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Optical gain in optically pumped cubic GaN at room temperature
38
Citations
16
References
1997
Year
Wide-bandgap SemiconductorPhotonicsSpontaneous EmissionPhotoluminescenceEngineeringPhysicsOptical PropertiesApplied PhysicsAluminum Gallium NitrideCubic GanGan Power DeviceCategoryiii-v SemiconductorOptoelectronicsHigh-power LasersTransient Surface Emission
We investigate the transient surface emission and the optical gain of cubic GaN on GaAs(001) upon pulsed optical pumping at room temperature. The initial decay time of the transient surface emission drastically decreases with increasing excitation density, reaching a value as short as 20 ps at a fluence of 50 μJ cm−2. This rapid decay suggests the presence of laterally amplified spontaneous emission. In fact, gain-stripe measurements of the edge emission reveal an optical gain exceeding 100 cm−1 at a fluence of 20 μJ cm−2.
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