Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy

Abstract

The assembly of strained InAs islands was manipulated through growth on patterned GaAs substrates with chemical beam epitaxy. Conditions were found to selectively place the islands in patterns features but not on surrounding unpatterned fields. Chains of islands having 33 nm minimum periods were formed in trenches, and single or few islands were grown in arrays of holes. When capped with GaAs, the islands behave as quantum dots and are optically active.