Origin of the blue photoluminescence from SiO2(SiC)∕SiC on Si substrate

Abstract

SiC film is prepared by heating the polystyrene/Si in 1atm ambient Ar at 1270°C. The as-grown SiC film is characterized by scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Based on the results, it is suggested that a SiO2(SiC) layer is located on the top of the as-grown SiC film. A blue photoluminescence band is observed from the as-grown sample. The photoluminescence band has the same origin as those from silica nanowires and SiC nanostructures and is associated with the near interface traps at the interface of SiO2∕SiC or SiO2∕Si.