Epitaxial growth of <i>B</i> <i>a</i> <i>T</i> <i>i</i> <i>O</i>3 thin films at 600 °C by metalorganic chemical vapor deposition

Abstract

BaTiO3 thin films were grown epitaxially on (100) MgO substrates by metalorganic chemical vapor deposition (MOCVD) at a temperature of 600 °C. This substrate temperature is the lowest reported temperature for the growth of epitaxial BaTiO3 films by an MOCVD process. The films had a cube–cube orientation relationship with the substrate and were oriented with an a-axis perpendicular to the substrate plane. Nanoscale energy dispersive x-ray spectrometry measurements showed no evidence of interdiffusion between the film and substrate.