Publication | Closed Access
Disordering of the ZnCdSe single quantum well structure by Cd diffusion
12
Citations
5
References
1996
Year
Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorQuantum MaterialsCompound SemiconductorMaterials SciencePhotoluminescencePhysicsCrystalline DefectsNanotechnologyOptoelectronic MaterialsZncdse Single QuantumZncdsse/znsse SuperlatticeQuantum SolidNanocrystalline MaterialCd DiffusionApplied PhysicsCondensed Matter PhysicsDisordered Quantum SystemCadmium Diffusion
The effects of annealing on a ZnCdSe single quantum well (SQW) structure with ZnCdSSe/ZnSSe superlattice optical guiding layers are investigated. X-ray diffraction and photoluminescence (PL) measurements showed disordering of a ZnCdSSe/ZnSSe superlattice after annealing at about 500 °C. The PL peak energy of the SQW shifted to the higher energy side, and the linewidth narrowed in the sample annealed at 300 °C. Cadmium diffusion was confirmed by secondary ion mass spectrometry. We found that the disordering of the ZnCdSSe/ZnSSe superlattice and the changes in the emissions from the SQW were due to the Cd diffusion.
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