Electrical resistivity of Cu and Nb thin films

Abstract

The electrical resistivity and temperature coefficient of resistivity (TCR) of Cu and Nb thin films have been measured over a range of layer thicknesses between 5.6 nm and 1106 nm. The structure of the films has been characterized using transmission electron microscopy (TEM) and x-ray diffraction. The experimental results have been compared with the semi-classical theory of thin-film resistivity due to Dimmich. The grain boundary reflectivity, R, has been found to vary with grain size in the Nb films.