Oxygen-containing radiation defects in Si1−x Gex

Abstract

The processes of formation and annealing of radiation defects in Si1−x Gex samples irradiated with 4-MeV electrons were studied. It is shown that, in the range of Ge contents of 3.5–15 at. %, a reduction in the efficiency of formation of oxygen-containing defects (VO and VO2) compared to that in silicon is observed. The existence of three types of VO centers, perturbed and unperturbed by neighboring Ge atoms, is detected in Si1−x Gex.