A new and reliable direct parasitic extraction method for MESFETs and HEMTs

Abstract

A novel and accurate analytical direct extraction method for the determination of MESFET and HEMT parasitic elements is described. The technique differs from the commonly used "cold-FET" technique by avoiding the forward biasing of the Schottky gate junction. The parasitic capacitances, inductances and resistances are directly extracted from S-parameter measurements under pinched-FET and zero-bias conditions. Ambiguities commonly observed during resistance extraction using cold-FET techniques are avoided with the new method.