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Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor
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2003
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EngineeringSuperjunction DevicesPower ElectronicsSemiconductor DeviceHigh Voltage EngineeringConduction CharacteristicsPower SemiconductorsBulk Silicon WaferPower Electronic DevicesDevice ModelingElectrical EngineeringHigh-voltage Lateral DoubleBias Temperature InstabilityPower Semiconductor DeviceTime-dependent Dielectric BreakdownCharge Balance MechanicsMicroelectronicsExtreme Environment ElectronicsPower DeviceApplied Physics
Superjunction devices are reported to provide better high‑voltage operation characteristics than conventional abrupt junction devices in silicon power applications. The study fabricates a superjunction reduced surface field lateral double diffused MOSFET on bulk silicon to enhance high‑voltage device performance. The device incorporates p‑type strips in the drift region to enable higher doping and lower conduction resistance, and its turn‑on resistance, breakdown behavior, geometry, temperature dependence, and charge‑balance mechanics are investigated. The SJ‑RESURF LDMOSFET achieves an on‑resistance of 3.53 Ω·mm², a breakdown voltage of 335 V, a 30 µm drift length, and a 25 % lower turn‑on resistance than the conventional structure.
Superjunction devices are reported to provide better high-voltage operation characteristics than conventional abrupt junction devices in silicon power applications. In this study, the superjunction reduced surface field (SJ-RESURF) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) is fabricated on a bulk silicon wafer to improve the operating characteristics of high-voltage devices. By introducing the p-type strips in the drift region, higher doping concentration of the drift region can be adopted to reduce the conduction resistance. The SJ-RESURF LDMOSFET with a specific on-resistance of 3.53 Ω·mm2, a breakdown voltage of 335 V and a drift length of 30 µm, is demonstrated; its turn on-resistance is 25% better than that of the conventional structure. The turn-on resistance, breakdown behavior, device geometry, temperature, and charge balance mechanics of the SJ-RESURF LDMOSFET are examined herein.