Stress in thick diamond films deposited on silicon

Abstract

20-μm-thick diamond films deposited on Si single-crystal substrates by microwave plasma-enhanced chemical vapor deposition showed significant curvature. The internal stress distribution was estimated using the model of an elastic bimetallic strip. The results indicate that the films are under a mean tensile stress of 1.1 GPa, and are discussed using information from x-ray diffraction and Raman spectra.