Elastic and surface energies: Two key parameters for CdSe quantum dot formation

Abstract

The two-dimensional–three-dimensional transition of a strained CdSe layer on (001) ZnSe induced by the use of amorphous selenium is studied. To precisely control the thickness of the CdSe layer, atomic layer epitaxy growth mode is used. Atomic force microscopy and reflection high-energy electron diffraction measurements reveal the formation of CdSe islands when 3 ML (monolayers) of CdSe, corresponding to the critical thickness, are deposited. When only 2.5 ML of CdSe are deposited another relaxation mechanism is observed, leading to the appearance of strong undulations on the surface. For a 3 ML thick CdSe layer, transmission electron microscopy images indicate that the formation of the islands occurs only after the amorphous selenium desorption.